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AH202
Product Features
* 50 - 2200 MHz * +30 dBm P1dB * +47 dBm Output IP3 * 17 dB Gain @ 900 MHz * MTTF >100 Years * Single Positive Supply * Internally Matched * Lead-free/RoHS-compliant 6x6mm QFN SMT package
1W High Linearity Amplifier
Product Description
The AH202 is a 1-Watt driver amplifier that offers excellent dynamic range in a low-cost, lead-free/RoHScompliant 6x6 mm 28-pin QFN surface-mount package. This device provides its optimum P1dB and OIP3 performance when biased at + 11 V; It can also be biased as low as +9 V for lower power applications. The backside metalization provides excellent thermal dissipation while allowing visible evidence of solder reflow across the bottom of the package on a SMT board. Superior thermal design allows the product an MTTF of over 100 years at a mounting temperature of +85 C. All devices are 100% RF & DC tested. The product is targeted for use as a driver amplifier for wireless infrastructure or CATV applications where high linearity and medium power is required.
Functional Diagram
28 1 2 RF IN 3 4 5 6 N/C 7 8 9 10 11 12 13 14 27 26 25 24 23 22 21 20 19 RF OUT 18 17 16 15
Applications
* Mobile Infrastructure * CATV / DBS * Optimal for VHF / UHF broadband applications * Defense / Homeland Security
Function Input No Connect Output/Bias No Connect or Ground Ground
Pin No. 3 7 19 All other pins Backside Paddle
Specifications (1)
Parameters
Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) Noise Figure IS-95 Channel Power (3)
@ -45dBc ACPR
Typical Performance (4)
Units
MHz MHz dB dB dB dBm dBm dB dBm mA V
Min
50 14
Typ
800 17 20 18 +30 +47 2.5 +24 330 +11
Max
2200
Parameters
Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 Noise Figure IS-95 Channel Power
@ -45dBc ACPR @ -45dBc ACLR
Units
MHz dB dB dB dBm dBm dB
(3)
Typical
1900 15 17 10 +29.7 +46 3.8 +23 2140 15 8 13 +29.4 +45.5 4.8 +20.5
+29 +45
900 17 20 18 +30 +47 2.8 +24 -
dBm
(5)
WCDMA Channel Power 390 Supply Bias
dBm
Operating Current Range Supply Voltage
+11 V @ 330 mA
4. Data reflects performance of a typical AH202 in an application circuit including associated circuit board and 1. Test conditions unless otherwise noted: 25C, Vdd = 11 V in a 50- PDWFKHGIL[WXUH passive component losses. 5. 3GPP W-CDMA, Test Model 1, +32 DPCH, Pk/Avg Ratio = 8.5 dB at a 0.01% probability, 5 2. 3OIP measured with two tones at an output power of +10 dBm/tone separated by 10 MHz. The MHz offset, Integrated Channel BW = 3.84 MHz. suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. IS-95, 9 Channels Forward, Pk/Avg Ratio = 11.5 dB at a .001% probability, 885 kHz offset, 30 kHz bandwidth, Channel BW = 1.23 MHz.
Absolute Maximum Rating
Parameter
Operating Case Temperature Storage Temperature DC Voltage RF Input Power (continuous) Maximum Junction Temperature
Ordering Information
Part No.
AH202-F AH202-PCB900 AH202-PCB1900 AH202-PCB2140
Rating
-40 to +85 C -55 to +125 C +13 V +16 dBm +220 C
Description
1W High Linearity Amplifier
(lead-free/RoHS-compliant 6x6mm QFN package)
900 MHz Evaluation Board 1900 MHz Evaluation Board 2140 MHz Evaluation Board
Specifications and information are subject to change without notice
Operation of this device above any of these parameters may cause permanent damage.
WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com
Page 1 of 9 May 2007
AH202
Typical Device Data
1W High Linearity Amplifier
S-parameters (VDS = +11 V, IDS P$XQPDWFKHGGHYLFHLQD V\VWHP * Measurements are shown for an unmatched packaged device with the data being de-embedded to the device leads.
Gain
20 19 18 17 S21 (dB) 16 (dB) 15 14 13 12 11 10 0 0.5 1 1.5 Frequency (GHz) 2 2.5 -30 0 0.5 1 1.5 Frequency (GHz) 2 2.5 -20 -25 -15 -5 -10
Return Losses
0
S11 S22
S-Parameters (VDS = +11.0V, IDS = 330mA, T = +25C, unmatched device in a 50 system)
Freq (MHz) 50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 S11 (dB) -17.78 -18.60 -17.34 -14.70 -11.92 -10.29 -9.20 -8.23 -7.74 -7.43 -7.73 -8.76 -10.40 -10.57 -6.72 -3.60 -1.91 S11 (ang) -137.86 -153.83 -150.80 -149.17 -159.61 -171.08 174.71 160.52 145.06 127.89 108.79 84.28 43.69 -24.74 -90.87 -136.82 -167.99 S21 (dB) 18.26 18.06 18.03 17.87 17.43 16.93 16.36 15.90 15.43 15.04 14.82 14.72 14.59 14.42 13.29 10.89 7.61 S21 (ang) 169.32 166.20 156.86 135.75 115.76 96.20 77.49 58.22 40.52 23.04 4.23 -15.48 -38.77 -65.43 -97.06 -128.44 -154.46 S12 (dB) -21.43 -21.34 -21.46 -21.84 -22.34 -22.96 -23.72 -24.54 -25.32 -26.07 -26.69 -26.94 -26.60 -25.80 -25.02 -24.82 -25.13 S12 (ang) 1.41 -4.54 -12.16 -25.03 -37.49 -48.84 -61.29 -73.36 -85.56 -99.09 -115.15 -132.95 -155.57 176.52 143.13 111.82 87.68 S22 (dB) -15.33 -15.51 -16.27 -18.57 -21.38 -26.07 -21.37 -16.16 -12.76 -10.27 -8.39 -7.17 -6.37 -6.14 -6.69 -7.11 -6.73 S22 (ang) -170.64 177.37 161.24 135.96 93.89 25.81 -47.34 -78.06 -98.55 -114.42 -129.46 -144.14 -158.61 -172.06 176.96 173.14 174.58
Application Circuit PC Board Layout
Circuit Board Material: .014" Getek (r=4.2), four layer, 1 oz copper Microstrip line details: width = .026", spacing = .026"
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 2 of 9 May 2007
AH202
1W High Linearity Amplifier
Reference Design: 50-800 MHz
The AH202 is suitable for applications between 50 - 800 MHz without any requirements for input or output matching. Only bypass and blocking capacitors and an RF bias choke are needed for operation. A user can simply request an AH202-PCB900 Evaluation Board and replace components C1, C2, C3, C6, L1, and L2 to the values shown below to evaluate the device.
Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3
(+10 dBm / tone, 10 MHz spacing)
MHz dB dB dB dBm dBm dB
50 18 -13 -13
200 17.9 -17 -15
400 600 800 17.5 17.0 16.3 -15 -12.4 -10.3 -17 -22 -28 +30 +47
Supply Bias
+11 V @ 330 mA
+ 11V
CAP ID=C5 C=1e5 pF
CAP ID=C4 (0805) C=1000 pF
PORT P=1 Z=50 Ohm
CAP ID=C1 C=1000 pF
RES ID=L2 R=0 Ohm
IND ID=L1 L=470 nH
PORT P=2 Z=50 Ohm
SUBCKT ID=S1 NET="AH202_F"
CAP ID=C2 C=1000 pF
Measured Performance
20 15 10 Magnitude (dB) 5 0 -5 -10 -15 -20 -25 -30 0 0.2 0.4 0.6 Frequency (GHz) 0.8 1
DB(|S[1,1]|) DB(|S[2,1]|) DB(|S[2,2]|)
Notes: * * * *
5
removed from the circuit without any effect to the performance. The microstrip line is weakly co-planar. Ground planes around it are not necessary for operation of the AH202. Adequate heat sinking is required for the device. Further mounting instructions are shown in the AH202 datasheet. The RF choke should be a wirewound ceramic type to insure sufficient current carrying capacity. Coilcraft's 1008 CS series is recommended (part #1008CS-471X_B_).
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Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 3 of 9 May 2007
AH202
Frequency S21 - Gain S11 S22 Output P1dB Output IP3 IS-95A Ch. Power
@ -45 dBc ACPR
1W High Linearity Amplifier
Application Circuit: 900 MHz (AH202-PCB900)
Typical RF Performance at 25C
900 MHz 17 dB - 20 dB - 18 dB + 30 dBm + 47 dBm + 24 dBm 2.8 dB +11 V 330 mA
CAP ID=C6 C=2.7 pF CAP ID=C2 C=100 pF
PORT P=2 Z=50 O hm
+ 11V
CAP ID=C5 (1206) C=100000 pF
CAP ID=C4 (0805) C=1000 pF
PO RT P=1 Z=50 Ohm
CAP ID=C1 C=100 pF
IND ID=L2 L=3.3 nH
SUBCKT ID=S1 NET="AH202_F"
CAP ID=C3 C=100 pF IND ID=L1 (1008) L=33 nH
Noise Figure Supply Voltage Supply Current
Notes: 1.
2. 3. 4.
The amplifier should be connected directly to a +11 V regulator; no dropping resistor is required. If no DC signal is present at the input (pin 1), C1 can be removed. The gate (input pin) is internally grounded in the amplifier. Component sizes are 0603 unless otherwise noted. RF choke L1 should be wirewound ceramic type to insure sufficient current carrying capacity. Coilcraft's 1008 CS series (part # 1008CS-330X_B) is recommended. C6 is located at silk screen marker "C" on the WJ evaluation board.
S-Parameters
Noise Figure vs. Frequency 0 Noise Figure (dB) S11 & S22 (dB) -5 -10 5 4 3 2 1 0 700
Vd = 11.0V, Temp = 25C
20 19 18 S21 17 16 15 14 13 12 11 10 700
Vd = +11.0V, Temp = +25C
S21 (dB)
S22 S11
-15 -20 -25 1100
800 900 1000 Frequency (MHz)
800
900 1000 Frequency (MHz)
1100
OIP3 vs. Pout
Vd = +11.0V, Temp = +25C
ACPR vs. Channel Power
900 MHz, IS-95 Ch. Fwd. 885KHz offset, 30 KHz Meas. BW
55 ACPR (dBc) 50 45 40 35 5 7 9 11 13 Pout (dBm) 15 17
-40 -45
OIP3 (dBm)
-50 -55 -60 -65 -70 -75 15 17 19 21 23 Output Channel Power (dBm) 25
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 4 of 9 May 2007
AH202
1W High Linearity Amplifier
Application Circuit: 1900 MHz (AH202-PCB1900)
Typical RF Performance at 25C
Frequency S21 - Gain S11 S22 Output P1dB Output IP3 IS-95A Ch. Power
@ -45 dBc ACPR
+ 11V
CAP ID = C5 (12 06 ) C=1e 5 pF
1900 MHz 15 dB - 17 dB - 10 dB + 29.7 dBm + 46 dBm + 23 dBm 3.8 dB +11 V 330 mA
CAP ID= C4 (0 80 5) C=1 000 pF
P OR T P =1 Z= 50 O hm
S UB C KT ID= S1 N ET ="AH 20 2_F"
CAP ID =C3 C =56 pF IND ID= L 1 (1 008 ) L=2 2 nH
CAP ID= C2 C =56 pF
Noise Figure Supply Voltage Supply Current
CAP ID= L 2 C =2.4 pF
TLIN ID = TL1 Z0=50 O hm EL =31 D eg F0=19 00 M H z
CAP ID = C7 C=1 .0 pF
P OR T P =2 Z= 50 Ohm
Notes: 1.
2. 3.
The amplifier should be connected directly to a +11 V regulator; no dropping resistor is required. Component sizes are 0603 unless otherwise noted. RF choke L1 should be wirewound ceramic type to insure sufficient current carrying capacity. Coilcraft's 1008 CS series (part # 1008CS-220X_B) is recommended. C8 is located at silk screen marker "7" on the WJ evaluation board. Noise Figure
Vd = +11.0 V, Temp = +25C
S-Parameters
Vd = +11.0V, Temp = +25C
16 15 14 13 12 11 10 9 8 7 6 1700
S21
0 S11 & S22 (dB) -5 -10
S22
6 Noise Figure (dB) 5 4 3 2 1 0 1700
S21 (dB)
-15 -20 -25 2200
S11
1800
1900
2000
2100
Frequency (MHz)
1800 1900 Frequency (MHz)
2000
OIP3 vs. Pout
ACPR vs. Channel Power
1900 MHz., IS-95 Ch. Fwd, 885 KHz offset, 30 KHz Meas. BW
55 50
Vd = +11.0 V, Temp = +25C
-40 -45 ACPR (dBc) 5 7 9 11 Pout (dBm) 13 15 17 -50 -55 -60 -65 -70 -75 14 16 18 20 22 Output Channel Power (dBm) 24
OIP3 (dBm)
45 40 35
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 5 of 9 May 2007
AH202
1W High Linearity Amplifier
Reference Design: 1900 MHz
using the AH202 in the previously recommended circuit configuration with the AH201 (AH201-PCB1900) Typical RF Performance at 25C
Frequency S21 - Gain S11 S22 Output P1dB Output IP3 IS-95A Ch. Power
@ -45 dBc ACPR
+1 1V
CAP ID=C5 (1206) C=1e5 pF
1900 MHz 15 dB - 8 dB - 8 dB + 29.7 dBm + 46 dBm + 23 dBm 3.8 dB +11 V 330 mA
CAP ID=C4 (0805) C=1000 pF
PORT P=1 Z=50 Ohm
CAP ID=C1 C=56 pF
RES ID=L2 R=0 Ohm
SUBCKT ID=S1 NET="AH202_F"
CAP ID=C3 C=56 pF IND ID=L1 (1008) L=22 nH
CAP ID=C2 C=56 pF
Noise Figure Supply Voltage Supply Current
CAP ID=C6 C=0.5 pF
TLIN ID=TL1 Z0=50 Ohm EL=31 Deg F0=1900 MHz
CAP ID=C7 C=1.0 pF
PORT P=2 Z=50 Ohm
Notes: 1. The amplifier should be connected directly to a +11 V regulator; no dropping resistor is required. 2. If no DC signal is present at the input (pin 1), C1 can be removed. The gate (input pin) is internally grounded in the amplifier. 3. Component sizes are 0603 unless otherwise noted. RF choke L1 should be wirewound ceramic type to insure sufficient current carrying capacity. Coilcraft's 1008 CS series (part # 1008CS-220X_B) is recommended.
4. 5.
16 15 S21 (dB)
5
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the performance. C6 is located at silk screen marker "C" and C8 is located between silk screen markers "6" and "7" on the WJ evaluation board.
S-Parameters
Vd = +11.0V, Temp = +25C
S21
Noise Figure 0 -5 Noise Figure (dB) S11 & S22 (dB) 6 5 4 3 2 1 0 1700
Vd = 11.0V, Temp = 25C
S22
14 13 12 1700
S11
-10 -15 -20 2000
1800 1900 Frequency (MHz)
1800 1900 Frequency (MHz)
2000
OIP3 vs. Pout
Vd = +11V, Temp = 25C
ACPR vs. Channel Power
1900 MHz., IS-95 Ch. Fwd, 885 KHz offset, 30 KHz Meas. BW
55 OIP3 (dBm) ACPR (dBc) 5 7 9 11 13 Pout (dBm) 15 17 50 45 40 35
-40 -45 -50 -55 -60 -65 -70 -75 14 16 18 20 22 Output Channel Power (dBm) 24
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 6 of 9 May 2007
AH202
1W High Linearity Amplifier
Application Circuit: 2140 MHz (AH202-PCB2140)
Typical RF Performance at 25C
Frequency
S21 - Gain S11 S22 Output P1dB Output IP3
W-CDMA Ch. Power
@ -45 dBc ACLR
2140 MHz 15 dB - 8 dB - 13 dB + 29.4 dBm + 45.5 dBm + 20.5 dBm 4.8 dB +11 V 330 mA
+ 11V
CA P ID =C5 (12 06 ) C=1e 5 pF
CA P ID=C 4 (0 80 5) C=1 000 pF
P OR T P =1 Z = 50 O hm
C AP ID = L2 C = 2.2 p F
S UB C K T ID=S 1 N ET ="A H 20 2_F"
C AP ID = C3 C = 56 pF IND ID=L 1 (1 008 ) L= 2 2 nH
C AP ID=C 2 C = 56 pF
Noise Figure Supply Voltage Supply Current
T LIN ID =T L1 Z 0= 50 O hm EL = 28 D eg F 0= 21 40 M H z
CA P ID =C 7 C=1 .0 pF
P OR T P =2 Z = 50 O hm
Notes: 1. 2.
3. 4.
The amplifier should be connected directly to a +11 V regulator; no dropping resistor is required. If no DC signal is present at the input (pin 1), C1 can be removed. The gate (input pin) is internally grounded in the amplifier. Component sizes are 0603 unless otherwise noted. RF choke L1 should be wirewound ceramic type to insure sufficient current carrying capacity. Coilcraft's 1008 CS series (part # 1008CS-220X_B) is recommended. C7 is located at silk screen marker "6" on the WJ evaluation board.
S-Parameters 16 14 S21 (dB) 12 10 8 6 2000
S11
Noise Figure 0 S11 & S22 (dB) -5 -10
S22
Vd = +11.0V, Temp = +25C
S21
6 Noise Figure (dB) 5 4 3 2 1 0 2000
Vd = + 11V, Temp = 25C
-15 -20 -25 2300
2100 2200 Frequency (MHz)
2100 2200 Frequency (MHz)
2300
OIP3 vs. Pout 55 50 45 40 35 5 7 9 11 Pout (dBm) 13 15 17
Vd = +11.0 V, Temp = +25C
ACLR vs. Channel Power
f = 2140MHz, 3GPP W-CDMA, Test Model 1, +32 DPCH, 5 MHz offset
-40 ACLR (dBc) -45 -50 -55 -60 15 16 17 18 19 20 21 Output Channel Power (dBm) 22
OIP3 (dBm)
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 7 of 9 May 2007
AH202
Frequency
S21 - Gain S11 S22 Output P1dB Output IP3
W-CDMA Ch. Power
@ -45 dBc ACLR
1W High Linearity Amplifier
Reference Design: 2140 MHz
using the AH202 in the previously recommended circuit configuration with the AH201 (AH201-PCB2140) Typical RF Performance at 25C
2140 MHz 14.6 dB -7 dB - 7 dB + 29.4 dBm + 45.5 dBm + 20.5 dBm 4.2 dB +11 V 330 mA
TLIN ID= TL1 Z0= 50 Ohm E L=28 Deg F0= 2140 M Hz
+ 11V
CAP ID=C5 (1206) C=1e5 pF
CAP ID=C 4 (0805) C=1000 pF
P ORT P =1 Z=5 0 Ohm
C AP ID=C1 C =56 pF
RES ID=L2 R=0 Ohm
SUBCKT ID=S1 NET="AH202_F"
CAP ID=C3 C=56 pF IND ID=L 1 (10 08) L=18 nH
CAP ID=C2 C=56 pF
Noise Figure Supply Voltage Supply Current
CAP ID=C7 C=1.1 pF
P ORT P =2 Z=50 Ohm
Notes: 1. 2.
3. 4. 5.
The amplifier should be connected directly to a +11 V regulator; no dropping resistor is required. If no DC signal is present at the input (pin 1), C1 can be removed. The gate (input pin) is internally grounded in the amplifier. Component sizes are 0603 unless otherwise noted. RF choke L1 should be wirewound ceramic type to insure sufficient current carrying capacity. Coilcraft's 1008 CS series (part # 1008CS-180X_B) is recommended. R = 0 DWGHVLJQDWRU/LVXVHGDVDSODFHKROGHUIRUDGLIIHUHQWDSSOLFDWLRQFLUFXLW,WFDQEHUHPRYHGIURPWKHFLUFXLWZLWKRXWDQ\HIIHFW to the performance. C7 is located between silk screen markers "5" and "6" on the WJ evaluation board. Noise Figure 0 -5
S11
S-parameters
Vd = +11V, Temp = +25C
16
S21
6 Noise Figure (dB) S11 & S22 (dB) 5 4 3 2 1 0 2000
Vd = + 11V, Temp = 25C
15 S21 (dB) 14 13 12 11 2000
S22
-10 -15 -20 -25 2300
2100
2200
Frequency (MHz)
2100 2200 Frequency (MHz)
2300
OIP3 vs. Pout
Vd = + 11V, Temp = 25C
ACLR vs. Channel Power
f = 2140MHz, 3GPP W-CDMA, Test Model 1, +32 DPCH, 5 MHz offset
55 ACLR (dBc) 50 45 40 35 5 7 9 11 13 Pout (dBm) 15 17
-40 -45 -50 -55 -60 15 16 17 18 19 20 21 Output Channel Power (dBm) 22
OIP3 (dBm)
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 8 of 9 May 2007
AH202
1W High Linearity Amplifier
Mechanical Information
This package is lead-free/RoHS-compliant. It is compatible with both lead-free (maximum 260C reflow temperature) and leaded (maximum 245C reflow temperature) soldering processes. The plating material on the pins is annealed matte tin over copper.
Outline Drawing
Product Marking
The component will be lasermarked with a "AH202F" product label with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part will be located on the website in the "Application Notes" section.
ESD / MSL Information
ESD Rating: Value: Test: Standard: ESD Rating: Value: Test: Standard: Class 1B Passes between 500 and 1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 Class III Passes between 500 and 1000V Charged Device Model (CDM) JEDEC Standard JESD22-C101
Mounting Configuration / Land Pattern
MSL Rating: Level 2 at +260 C convection reflow Standard: JEDEC Standard J-STD-020
Functional Pin Layout
Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 FUNCTION GND or N/C GND or N/C RF Input GND or N/C GND or N/C GND or N/C No Connect GND or N/C GND or N/C GND or N/C GND or N/C GND or N/C GND or N/C GND or N/C Pin 15 16 17 18 19 20 21 22 23 24 25 26 27 28 FUNCTION GND or N/C GND or N/C GND or N/C GND or N/C RF Output GND or N/C GND or N/C GND or N/C GND or N/C GND or N/C GND or N/C GND or N/C GND or N/C GND or N/C
Thermal Specifications
Parameter
Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tjc (2)
MTTF vs. GND Tab Temperature
100
Rating
-40 to +85 C 17.5 C / W 152 C
10
Backside paddle is RF and DC ground. Pin 7 is required to be not connected or grounded for the AH202 to be functional.
Notes: 1. The amplifier can be operated at 105 C case temperature for up to 1000 hours over its lifetime with minimal degradation in performance and will not degrade device operation at the recommended maximum 85 C case temperature for the rest of its lifetime. 2. The thermal resistance is referenced from the hottest part of the junction to the backside copper paddle. 3. This corresponds to the typical biasing condition of +11V, 350 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 160 C.
1
0 60 70 80 90 100 Tab Temperature (C) 110
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 9 of 9 May 2007

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